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(R)
STTA512D/F/B/FP
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS
n
5A 1200V 45ns 2.0V
A K
A K
K
n n
n
n n
n
SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGES: ISOWATT220AC, TO-220FPAC Electrical insulation : 2000V DC Capacitance : 12pF.
TO-220AC STTA512D
ISOWATT220AC STTA512F
K
A NC
A K
DPAK STTA512B
TO-220FPAC STTA512FP
DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current TO-220AC / DPAK ISOWATT220AC / TO-220FPAC IFRM IFSM Tstg Tj Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes.
Value 1200 1200 20 10 70 45 - 65 to + 150 150
Unit V V A A A A C C
TURBOSWITCH is a trademark of STMicroelectronics.
August 2003 - Ed: 5B
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STTA512D/F/B/FP
THERMAL AND POWER DATA Symbol Rth(j-c) Parameter Junction to case thermal resistance TO-220AC / DPAK ISOWATT220AC / TO-220FPAC P1 Conduction power dissipation IF(AV) = 5A =0.5 TO-220AC / DPAK Tc= 102C ISOWATT220AC / Tc= 84C TO-220FPAC 13 W Conditions Value 4.0 5.5 12 W Unit C/W
Pmax
Total power dissipation TO-220AC / DPAK Tc= 98C Pmax = P1 + P3 (P3 = 10% P1) ISOWATT220AC / Tc= 78C TO-220FPAC
STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR
*
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
Test conditions IF =5A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.35 0.3
Max 2.2 2.0 100 2.0 1.57 86
Unit V V A mA V m
**
Vt0 Rd
Pulse test: * tp = 380 s, < 2% ** tp = 5 ms , < 2%
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -40 A/s dIF/dt = -500 A/s Tj = 125C VR = 600V dIF/dt = -500 A/s IF =5A 7.5 20 IF =5A 1.2 / Min Typ 45 95 A Max Unit ns
IRM
Sfactor
TURN-ON SWITCHING Symbol Parameter tfr Forward recovery time
Test conditions Tj = 25C IF =5 A, dIF/dt = 40 A/s measured at 1.1 x VFmax
Min
Typ
Max 900
Unit ns
VFp
Peak forward voltage Tj = 25C IF =5A, dIF/dt = 40 A/s IF =40A, dIF/dt = 500 A/s
V 35 50
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Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A)
= 0.1 = 0.2 = 0.5
P1(W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0
100.00
Tj=125C
10.00
=1
1.00 0.10
IF(av) (A) 0 1 2 3 4 5 6
VFM(A) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 3: Peak reverse recovery current versus dIF/dt (90% confidence).
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC and DPAK).
Zth(j-c)/Rth(j-c) 1.0
IRM(A) 40
VR=600V Tj=125C IF=2*IF(av)
30 20 10 dIF/dt(A/s) 0 0 100 200 300 400 500
IF=IF(av)
0.8 0.6
= 0.5
0.4 0.2
= 0.2 = 0.1 Single pulse
tp(s) 1E-3 1E-2 1E-1 1E+0
0.0 1E-4
Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AC and TO-220FPAC).
Zth(j-c)/Rth(j-c)
Fig. 6: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 400 350
VR=600V Tj=125C
1.0 0.8 0.6
= 0.5
300 250
IF=2*IF(av)
200 150 100
IF=IF(av)
0.4 0.2
= 0.2 = 0.1 Single pulse
tp(s)
50
0.0 1E-3
1E-2
1E-1
1E+0
1E+1
0
dIF/dt(A/s)
0 100 200 300 400 500
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STTA512D/F/B/FP
Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
S factor 1.40 1.20 1.00 0.80
VR=600V Tj=125C IF<2*IF(av)
1.1
S factor
1.0
0.9
IRM
0.8
dIF/dt(A/s)
0.60 0 100 200 300 400 500
Tj(C) 0.7 25 50 75 100 125
Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 70 60 50 40
IF=IF(av) Tj=125C
Fig. 10: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 500 400 300
VFR=1.1*VF max. IF=IF(av) Tj=125C
30 20 10 0 0 100 dIF/dt(A/s) 200 300 400 500
100 0 100 200
dIF/dt(A/s)
200 300 400 500
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STTA512D/F/B/FP
APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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STTA512D/F/B/FP
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM t T = t/T
F = 1/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR . IR . (1 - )
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STTA512D/F/B/FP
APPLICATION DATA (Cont'd) Fig. F: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
V R x I RM
2
x( 3+
2xS )xF
6 x dI F dt V R x I RM x I L x ( S + 2 ) x F + 2 x dI F dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
V R x I RM
2
xSxF
6 x dI F
dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : (with non negligible serial inductance) + 6 x dI F dt L x I RM 2 x F 2 P3,P3' and P5 are suitable for power MOSFET and IGBT P3' =
2
V R x I RM
x S xF
Fig. G: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA512D/F/B/FP
PACKAGE DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 0 Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8 Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.023 0 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8
0.80 typ.
0.031 typ.
FOOTPRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7 3 1.6 2.3 2.3 1.6
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STTA512D/F/B/FP
PACKAGE DATA ISOWATT220AC
A H B
DIMENSIONS REF. Millimeters Min. Max. 4.60 2.70 2.75 0.70 1.00 1.70 5.20 10.40 30.60 16.40 9.30 3.20 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00 28.60 15.90 9.00 3.00 Inches Min. 0.173 0.098 0.094 0.016 0.030 0.045 0.195 0.394 1.125 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 1.205 0.646 0.366 0.126
Diam
A B D
L7
L6 L2 L3
E F F1 G H L2 L3 L6 L7 Diam
F1
16.00 typ.
0.63 typ.
F G
n n n
D
E
Cooling method: by conduction (C) Recommended torque value: 0.55 m.N Maximum torque value: 0.7 m.N
PACKAGE DATA TO-220FPAC REF.
A H B
Dia L6 L2 L3 L5 D F1 L4 L7
F G1 G
E
A B D E F F1 G G1 H L2 L3 L4 L5 L6 L7 Dia.
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126
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STTA512D/F/B/FP
PACKAGE DATA TO-220AC (JEDEC outline) DIMENSIONS REF.
H2 C L5 OI L6 L2 D L7 A
Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151
A C D E F F1 G H2 L2 L4
M E
L9 F1 L4
16.40 typ.
0.645 typ.
F G
L5 L6 L7 L9 M Diam. I
2.6 typ.
0.102 typ.
n n n
Cooling method: by conduction (C) Recommended torque value: 0.55 m.N Maximum torque value: 0.7 m.N Ordering type STTA512D STTA512F STTA512B STTA512B-TR STTA512FP Marking STTA512D STTA512F A512 A512 STTA512FP Package TO-220AC ISOWATT220AC DPAK DPAK TO-220FPAC Weight 1.86g 2g 0.3g 0.3g 2g Base qty 50 50 75 2500 50 Delivery mode Tube Tube Tube Tape & reel Tube
n
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10

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